CSR Times Electric open an 8-inch IGBT wafer and module production base in China
Rapid development targets electric automotive and renewable energy markets
Lincoln, England, 10th July 2014 - Dynex Semiconductor today announced that on 20th June 2014 its parent company, Zhuzhou CSR Times Electric Co Ltd held a ceremony at its facility in China to mark the opening of a new $240 million IGBT production base in Zhuzhou.
The new production base, the first of its kind in China, and the second worldwide will produce high power IGBT chips and modules using 8-inch silicon. An annual output of the first phase of this new production line is expected to reach 120,000 wafers and 1 million pieces of IGBT modules. This IGBT line is being operated by the newly formed Semiconductor Business Unit of CSR Times Electric, of which Dynex is the European subsidiary.
The technology being used in the new facility has been developed at Lincoln in the UK by the multinational CSR Zhuzhou R&D Centre based at Dynex Semiconductor Ltd. The UK R&D centre was established in 2010 to focus on leading-edge power semiconductor technology and specifically the next generation of IGBT products. CSR began construction of the new 8-inch production line in May 2012. Throughout the build, equipment installation and commissioning Dynex has played a leading role in providing technical advice, support and staff training both in Lincoln and in China.
The IGBT is the key component in today’s energy efficient electric energy conversion systems used in electric locomotives, metros, electric and hybrid electric vehicles, electric power grids and renewable energy plants. Using the latest silicon wafer fabrication equipment and the latest process technologies, the new line will initially produce high power modules using the latest soft punch through field stop and trench technologies.
Dr Paul Taylor, President and CEO of Dynex Commented “Since the acquisition of Dynex by CSR Times Electric in 2008 there has been a rapid development in our IGBT capability. We began with 4 –inch wafers, then up graded to 6-inch at our plant in Lincoln. We then extended our technology to support the design of this new facility. It complements our base in the UK by giving us access to a world leading 8-inch IGBT wafer fabrication facility and a high volume module assembly line”.
“Our rapid development does not stop there “continued Dr Taylor “the new line has been kitted out with the latest equipment, and the next phase of expansion is already being planned. This targets key markets such as electric automotive and renewable energy. So at our UK R&D Centre we are already working on designing the next generation of advanced silicon and silicon carbide power devices, and are busy recruiting new staff to expand our multinational research, design and development teams to meet this exciting new challenge”
For further information about this press release contact Paul Taylor + 44 1522 500 500